Book Chapters
“Fabrication and Characterizations of Bi2Te3 Based Topological Insulator Nanomaterials“, pp 429-455 in Outlook and Challenges of Nano Devices, Sensors, and MEMS, Springer (2017). ISBN: 978-3-319-50822-1.
Patent
“High-Sensitivity Nanoscale Wire Sensors”, X.P.A. Gao, C.M. Lieber, G.F. Zheng (patent numbers: US 8,575,663 B2; WO2008127314-A1; EP2095100-A1)
Journal Publications
If you do not have subscription access to the journals and like a copy of our papers, you can email Prof. Gao or download from arXiv where we have posted many of our papers.
80)Arvind Shankar Kumar, MingYuan Wang, YanCheng Li, Ruji Fujita, and Xuan P. A. Gao, “Interfacial Charge Transfer and Gate-Induced Hysteresis in Monochalcogenide InSe/GaSe Heterostructures” ACS Applied Materials & Interfaces 12(41), 46854-46861 (2020). https://doi.org/10.1021/acsami.0c09635
79)Arvind Shankar Kumar, Kasun Premasiri, Min Gao, Rajesh Kumar, Raman Sankar, Fang-Cheng Chou, and Xuan P. A. Gao, “Electron-electron interactions in the two-dimensional semiconductor InSe”, Phys. Rev. B 102, 121301(R) (2020). https://doi.org/10.1103/PhysRevB.102.121301
78)Kyle Crowley, Kevin Pachuta, Santosh Kumar Radha, Halyna Volkova, Alp Sehirlioglu, Emily B Pentzer, Marie-Helene Berger, Walter RL Lambrecht, Xuan PA Gao, “Electrical Characterization and Charge Transport in Chemically Exfoliated 2D LixCoO2Nanoflakes”, The Journal of Physical Chemistry C, 124, 38, 20693–20700 (2020). https://doi.org/10.1021/acs.jpcc.0c04747
77)Brian A. Holler, Kyle Crowley, Marie-Hélène Berger, Xuan P. A. Gao, “2D Semiconductor Transistors with Van der Waals Oxide MoO3 as Integrated High-k Gate Dielectric”, Advanced Electronic Materials, 6(10), 2000635 (2020). https://doi.org/10.1002/aelm.202000635
76)Javier Taboada-Gutiérrez, Gonzalo Álvarez-Pérez, Jiahua Duan, Weiliang Ma, Kyle Crowley, Iván Prieto, Andrei Bylinkin, Marta Autore, Halyna Volkova, Kenta Kimura, Tsuyoshi Kimura, M-H Berger, Shaojuan Li, Qiaoliang Bao, Xuan PA Gao, Ion Errea, Alexey Y. Nikitin, Rainer Hillenbrand, Javier Martín-Sánchez, Pablo Alonso-González, “Broad spectral tuning of ultra-low-loss polaritons in a van der Waals crystal by intercalation”, Nature Materials, 19, 964-968 (2020). DOI: 1038/s41563-020-0665-0
75)M.Z. Li, Z.H. Wang, X.P.A. Gao, Z. Zhang, “Vertically Oriented Topological Insulator Bi2Se3Nanoplates on Silicon for Broadband Photodetection”, Journal of Physical Chemistry C, 124 (18), 10135–10142 (2020). DOI: 10.1021/acs.jpcc.0c01978
74)Chieh-Wen Liu, Zhenhua Wang, Richard L.J. Qiu, X.P.A. Gao, “Topical Review: Development of Topological Insulator and Topological Crystalline Insulator Nanostructures”, Nanotechnology, 31, 192001 (2020). (Invited review) DOI: 10.1088/1361-6528/ab6dfc
73)LingNan Wei, ZhenHua Wang, ZhiDong Zhang, Chieh-Wen Liu,X.P.A. Gao “Enhanced linear magneto-resistance near the Dirac point in topological insulator Bi2(Te1−xSex)3nanowires”, Nano Research, 13(5), 1332-1338 (2020). DOI 10.1007/s12274-019-2577-3
72)Z.Zhang, † J. Zheng, † K. Premasiri† R. Li, S. Zhang, X. PA Gao, M. H. Litt, L. Zhu, “High κ Polymers of Intrinsic Microporosity: A New Class of High Temperature and Low Loss Dielectrics for Printed Electronics”, Materials Horizons, 7, 592-597 (2020). †equal contribution DOI: 10.1039/C9MH01261C
71)F.Wei, X.P.A. Gao, S. Ma, Z. Zhang, “Giant Linear Magnetoresistance and Carrier Density Tunable Transport in Topological Crystalline Insulator SnTe Thin Film” Physica Status Solidi B-Basic Solid State Physics, 256, 1900139 (2019).
70)Z.H. Wang, M. Li, X.P.A. Gao, Z. Zhang, “Broadband Photodetection of GeSe Films of Vertically Grown Nanoflakes”, ACS Applied Electronic Materials, 1(11), 2236-2243 (2019).
69)T.Q. Liu, X.Y. Liu, S. Bhattacharya, Z.P. Ye, R. He, X.P.A. Gao, R. Akolkar, R.M. Sankaran, “Plasma-Induced Fabrication and Straining of MoS2 Films for the Hydrogen Evolution Reaction” ACS Applied Energy Materials, 2, 5162-5170 (2019).
68)Mingze Li, Zhenhua Wang, Liang Yang, X.P.A. Gao, Zhidong Zhang, “From linear magnetoresistance of parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films”, Jour. of Phys. and Chem. Solids, 128, 331-336 (2019).
67)Liang Yang, Zhenhua Wang, Mingze Li, X.P.A. Gao, Zhidong Zhang “The dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films”, Nanoscale Advances, 1(6), 2303-2310 (2019).
66)Kasun Premasiri,† Wei Zheng, † Biao Xu, Tao Ma, Lin Zhou, Yue Wu, Xuan P.A. Gao “Electrically Driven Structural Phase Transition in Single Ag2Te Nanowire Devices”, Nanoscale 11(14), 6629-6634 (2019). †equal contribution
65)Kasun Premasiri, Xuan P.A. Gao “Tuning spin-orbit coupling in 2D materials for spintronics: A topical review”, Phys.: Condens. Matter31 193001 (2019). (Invited Review)
64)M. Li, Z. Wang, L. Yang, D. Pan, D. Li, X.P.A. Gao, Z. Zhang, “Growth and quantum transport properties of vertical Bi2Se3 nanoplate films on Si substrates”, Nanotechnology 29 (31), 315706 (2018).
63) Z.H. Wang, L.N. Wei, M. Li, Z. Zhang, X.P.A. Gao, “Magnetic Field Modulated Weak Localization and Antilocalization State in Bi2(TexSe1−x)3Films” Physica Status Solidi B-Basic Solid State Physics, 255, 1800272 (2018).
62) Tianqi Liu, Kasun Premasiri, Yongkun Sui, Xun Zhan, Haithem AB Mustafa, Ozan Akkus, Christian A Zorman, Xuan PA Gao, R Mohan Sankaran, “Direct, transfer-free growth of large-area hexagonal boron nitride films by plasma-enhanced chemical film conversion (PECFC) of printable, solution-processed ammonia borane”, ACS Applied Materials & Interfaces 10(50), 43936–43945(2018).
61) B. I. Edmondson, S. Liu, S. Lu, H.W. Wu, A. Posadas, D.J. Smith, X. P.A. Gao, A. A. Demkov, J. G. Ekerdt, “Effect of SrTiO3oxygen vacancies on the conductivity of LaTiO3/SrTiO3 heterostructures”, Journal of Applied Physics 124 (18), 185303 (2018).
60) K. Crowley, G. Ye, R. He, K. Abbasi, X.P.A. Gao, “α-MoO3as a Conductive 2D Oxide: Tunable n-Type Electrical Transport via Oxygen Vacancy and Fluorine Doping”, ACS Applied Nano Materials 1 (11), 6407-6413 (2018).
59) Z. H. Wang, X.P.A. Gao, Z.D. Zhang, “Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures”, Chinese Physics B 27 (10), 107901 (2018).
58) Richard L.J. Qiu, Chieh-Wen Liu, Shuhao Liu, Xuan P.A. Gao, “New Reentrant Insulating Phases in Strongly Interacting 2D Systems with Low Disorder”, Applied Sciences, 8(10), 1909 (2018).
57) Feng Wei, † Chieh-Wen Liu,*, † Da Li, Chun-Yang Wang, Hong-Rui Zhang, Ji-Rong Sun, Xuan P. A. Gao, Song Ma, and Zhidong Zhang, “Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures“, Phys. Rev. B 98, 161301(R) (2018) (Rapid Communication). †equal contribution
56) Chieh-Wen Liu, Feng Wei, Kasun Premasiri, Shuhao Liu, Song Ma, Zhidong Zhang, Xuan P. A. Gao, “Non-Drude Magneto-Transport Behavior in a Topological Crystalline Insulator/Band Insulator Heterostructure”, Nano Letters, 18 (10), 6538–6543 (2018).
55) Kasun Premasiri, Santosh Kumar Radha, Sukrit Sucharitakul, U. Rajesh Kumar, Raman Sankar, Fang-Cheng Chou, Yit-Tsong Chen, and Xuan P. A. Gao, “Tuning Rashba Spin-Orbit Coupling in Gated Multi-layer InSe“, Nano Letters 18, 4403-4408 (2018).
54) N. J. Goble, X. P. A. Gao, P. Berger, “Role of the different defects, their population, and distribution in the LaAlO3/SrTiO3 heterostructure’s behavior“, Journal of Applied Physics, 123, 155304 (2018).
53)Shuhao Liu, Naikun Sun, Mei Liu, Sukrit Sucharitakul, X. P.A. Gao, “Nanostructured SnSe: Synthesis, doping, and thermoelectric properties“, Journal of Applied Physics, 123, 115109 (2018).
52)Mingze Li, Zhenhua Wang, Liang Yang, X. P.A. Gao, Zhidong Zhang, “From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films“, Jour. of Phys. and Chem. Solids, in press (2017).
51) Mingze Li, Zhenhua Wang, Liang Yang, Da Li, Q. R. Yao, G. H. Rao, Xuan P. A. Gao, and Zhidong Zhang, “Electron delocalization and relaxation behavior in Cu-doped Bi2Se3films”, Phys. Rev. B, 96, 075152 (2017). DOI: 10.1103/PhysRevB.96.075152
50)Sukrit Sucharitakul, G. Ye, W. Lambrecht, Churna Bhandari, Axel Gross, H. Poelman, Rui He, X. P. A. Gao, “V2O5: a 2D van der Waals Oxide with Strong In-plane Electrical and Optical Anisotropy“, ACS Appl. Mater. Interfaces, 9 (28), 23949–23956 (2017).
49) N. Bi, L. Zhang, Q. Zheng, F. Zhuge, J. Li, X. P.A. Gao, Juan Du, “Control of ZnO nanowire growth and optical properties in a vapor deposition process”, Journal of Materials Science & Technology, 33(8), 850-855 (2017). doi.org/10.1016/j.jmst.2017.03.024
48) Nicholas J. Goble, Richard Akrobetu, Sukrit Sucharitakul, H. Zaid, M.H. Berger, Alp Sehirlioglu, and Xuan P. A. Gao, “Anisotropic electrical resistance in mesoscopic LaAlO3/SrTiO3devices with individual domain walls”, Scientific Reports, 7, 44361 (2017); doi:10.1038/srep44361.
47) Zhenhua Wang, Mingze Li, Liang Yang, Zhidong Zhang, X. P.A. Gao, “Broadband photovoltaic effect of n-type topological insulator Bi2Te3 films on p-type silicon substrates“, Nano Research, 10(6), 1872-1879 (2017). DOI 10.1007/s12274‐016‐1369‐2
46) Shuhao Liu, Lili Wang, Wei-Chun Lin, Sukrit Sucharitakul, Clemens Burda, Xuan P. A. Gao, “Imaging the long transport lengths of photo-generated carriers in oriented halide perovskite films“, Nano Letters 16, 7925 -7929 (2016).
45) Sukrit Sucharitakul, U. Rajesh Kumar, Raman Sankar, Fang-Cheng Chou, Yit-Tsong Chen, Chuhan Wang, Cai He, Rui He, Xuan P. A. Gao, “Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS“, Nanoscale 8, 19050-19057 (2016).
44) H. Zaid, M.H. Berger, D. Jalabert, M. Walls, R. Akrobetu, I. Fongkaew, W. R.L. Lambrecht, N. J. Goble, X. P. A. Gao, and A. Sehirlioglu, “Atomic-resolved depth profile of strain and cation intermixing around LaAlO3/SrTiO3 interfaces“, Scientific Reports 6, 28118 (2016). DOI:10.1038/srep28118
43) Zhenhua Wang, Liang Yang, Xiaotian Zhao, Zhidong Zhang, X. P.A. Gao, “Linear magneto-resistance versus weak antilocalization effects in Bi2Te3 films“, Nano Research, 8 (9), 2963-2969 (2015).
42) Thong Q. Ngo, Nicholas Goble, Agham Posadas, Kristy J. Kormondy, Sirong Lu, Martin D. McDaniel, David J. Smith, Xuan P. A. Gao, Alexander A. Demkov, and John G. Ekerdt,”Quasi-two–dimensional Electron Gas at the Interface of gamma–Al2O3/SrTiO3 Heterostructures Grown by Atomic Layer Deposition“, Journal of Applied Physics 118, 115303 (2015)
41) Sukrit Sucharitakul, Nicholas J. Goble, U. Rajesh Kumar, Raman Sankar, Zachary A. Bogorad, Fang Cheng Chou, Yit-Tsong Chen, Xuan P. A. Gao,”Intrinsic Electron Mobility Exceeding 1000 cm^2/(Vs) in Multilayer InSe FETs“, Nano Letters, 15 (6), pp 3815–3819 (2015). DOI: 10.1021/acs.nanolett.5b00493
40) Dong Liang, Juan Du, X. P.A. Gao, “InAs nanowire devices with strong gate tunability: fundamental electron transport properties and application prospects” (invited review), Journal of Materials Science & Technology, 31, 542-555 (2015). doi:10.1016/j.jmst.2015.01.006
39) Kristy J. Kormondy, Agham B. Posadas, Thong Q. Ngo, Sirong Lu, Nicholas Goble, Jean Jordan-Sweet, Xuan P. A. Gao, David J. Smith, Martha R. McCartney, John G. Ekerdt, and Alexander A. Demkov,”Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: control of oxygen vacancies“, Journal of Applied Physics, 117, 095303 (2015)
38) Rui He, Sukrit Sucharitakul, Zhipeng Ye, Courtney Keiser, T. E. Kidd, X. P.A. Gao, “Laser induced oxidation and optical properties of stoichiometric and non-stoichiometric Bi2Te3 nanoplates“, Nano Research, Volume 8, Issue 3, pp 851-859 (2015)
37) Zhenhua Wang, Liang Yang, Shao-Jie Li, Xiaotian Zhao, Hailing Wang, Zhidong Zhang, Xuan P.A. Gao, “Granularity Controlled Non-Saturating Linear Magneto-resistance in Topological Insulator Bi2Te3 Films“, Nano Letters, 14 (11), 6510–6514 (2014)
36) Yanyuan Zhao, María de la Mata,Richard Qiu, Jun Zhang,Xinglin Wen, Cesar Magan, Xuan P.A. Gao, Jordi Arbiol, Qihua Xiong, “Te-seeded Growth of Few-Quintuple Layer Bi2Te3 Nanoplates“, Nano Research, 7(9), 1243-1253 (2014)
35) Nicholas J. Goble, J.D. Watson, M.J. Manfra and X. P.A. Gao, “Impact of short range scattering on the 2D metallic transport in a correlated 2D Hole System“, Physical Review B, 90, 035310 (2014). arXiv:1308.3698
34) Ying Chen, Dong Liang, X. P.A. Gao, and J. Iwan D. Alexander, “Sensing and Energy Harvesting of Fluidic Flow by InAs Nanowires“, Nano Letters, 13, 3953–3957 (2013).
33) Richard L.J. Qiu, X. P.A. Gao “Reply to Comment on ‘Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System‘”, Physical Review Letters 110, 249702 (2013).
32) CheeHuei Lee, Rui He, ZhenHua Wang, Richard L.J. Qiu, Ajay Kumar, Conor Delaney, Ben Beck, Tim. E. Kidd,C. Clifton. Chancey, R. Mohan Sankaran, and Xuan P. A. Gao, Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets, Nanoscale, 5, 4337-4343 (2013).arXiv:1303.3851
31) Zhenhua Wang, Richard L.J. Qiu, CheeHuei Lee, ZhiDong Zhang and X. P.A. Gao, Ambipolar Surface Conduction in Ternary Topological Insulator Bi2(Te1-xSex)3 Nanoribbons, ACS Nano, 7, 2126–2131 (2013).arXiv:1303.3846
30) Guodong Li, Dong Liang, Richard L.J. Qiu and X. P.A. Gao, “Measurement of Thermal Conductivity of Individual Bi2Se3 Nano-ribbons by Self-heating Three-Omega Method“, Applied Physics Letters, 102, 043104 (2013).
29) Yuan Tian, M. R. Sakr, J. M. Kinder, D. Liang, R. L.J. Qiu, M. J. MacDonald, H.-J. Gao and X. P.A. Gao, “One-dimensional quantum confinement modulated thermoelectric properties in InAs nanowires“, Nano Letters, 12, 6492–6497 (2012).arXiv:1303.3838
28) S.W. Lee, J.R. Kumpfer, P.A. Lin, Guodong Li, X. P.A. Gao, S.J. Rowan, R.M. Sankaran, “In Situ Formation of Metal Nanoparticle Composites Via “Soft” Plasma Electrochemical Reduction of Metallosupramolecular Polymer Films“, Macromolecules, 45, 8201-8210 (2012).
27) Rui He, Zhenhua Wang, Richard L.J. Qiu, C. Delaney, B. Beck, T. E. Kidd, C. C. Chancey, X. P.A. Gao, “The observation of an infrared active phonon mode in the Raman spectroscopy of thin Bi2Te3 nanoplates“, Nanotechnology, 23, 455703 (2012).
26) Tim P. Taylor, PinAnn Lin, Yuan Tian, H.-J. Gao, X. P.A. Gao, R.M. Sankaran, M.C. Hersam, “Centrifugal Shape Sorting of Multifaceted Gold Nanoparticles Using an Atomic Plane-Selective Surfactant“, Journal of Physical Chemistry Letters 3, 1484-1487 (2012).
25) Dong Liang, X. P.A. Gao, “Strong tuning of spin orbit interaction in an InAs nanowire by surrounding gate“, Nano Letters 12 (6), 3263–3267 (2012). arXiv:1205.1550
24) Richard L.J. Qiu, X. P.A. Gao, L. N. Pfeiffer, K. W. West, “Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System“, Physical Review Letters 108, 106404 (2012). download pdf with high resolution figures here. arXiv:1109.5232.
23) Ananth S. Iyengar, Dong Liang, Xuan P.A. Gao, Alexis R. Abramson, “Densification effects on the electrical behavior of uni-axially compacted bismuth nanowires“, Acta Materialia 60 (5), 2369–2378 (2012).
22) PinAnn Lin*, Dong Liang*, Samantha Reeves, X. P.A. Gao, R.M. Sankaran, “Shape-controlled Au particles for InAs nanowire growth“, Nano Letters 12, 315−320 (2012). *equal contribution.
21) H. Tang*, D. Liang*, R. L.J. Qiu and X. P.A. Gao, “Two-Dimensional Transport Induced Linear Magneto-Resistance in Topological Insulator Bi2Se3 Nanoribbons,” ACS Nano 5, 7510–7516 (2011). *equal contribution. arXiv:1003.6099, arXiv:1101.2152
20) SeungWhan Lee, Dong Liang, X. P.A. Gao, R. M. Sankaran, “Direct writing of metal nanoparticles by localized plasma electrochemical reduction of metal cations in polymer films.” Advanced Functional Materials 21, 2155-2161 (2011).
19) Richard L.J. Qiu, X. P.A. Gao, L. N. Pfeiffer, K. W. West, “Degenerate versus semi-degenerate transport in a correlated 2D hole system”, Physical Review B 83, 193301 (2011). arXiv:1104.4834
18) G.F. Zheng, X. P.A. Gao, and C.M. Lieber,“Frequency Domain Detection of Biomolecules using Silicon Nanowire Transistor Biosensors”, Nano Letters 10 (8), 3179–3183 (2010).
17) D. Liang, J. Du, and X. P.A. Gao, “Anisotropic Magneto-conductance of InAs Nanowire: Angle Dependent Suppression of 1D Weak Localization,” Physical Review B 81, 153304 (2010). arXiv:0911.0478
16) B. Spivak, S. V. Kravchenko, S. A. Kivelson, and X. P. A. Gao, “Transport in strongly correlated two dimensional electron fluids“, Reviews of Modern Physics 82, 1743-1766 (2010). arXiv:0905.0414
15) X. P.A. Gao, G.F. Zheng and C.M. Lieber, “Subthreshold Regime has the Optimal Sensitivity for Nanowire FET Biosensors”, Nano Letters 10, 547–552 (2010).
14) W.H. Chiang, M.R. Sakr, X. P. A. Gao, and R. M. Sankaran, “Nanoengineering NixFe1-x catalysts for gas-phase selective synthesis of semiconducting single-walled carbon nanotubes“, ACS Nano 3, 4023–4032 (2009).
13) J. Du, D. Liang, H. Tang and X. P. A. Gao, “InAs Nanowire Transistors as Gas Sensor and the Response Mechanism“, Nano Letters 9, 4348–4351 (2009).
12) D. Liang, M. R. Sakr and X. P. A. Gao, “One-Dimensional Weak Localization of Electrons in a Single InAs Nanowire“, Nano Letters 9, 1709-1712 (2009). arXiv:0904.2338
11) M. R. Sakr and X. P. A. Gao, “Temperature dependence of the low frequency noise in InAs nanowire field effect transistors“, Appl. Phys. Lett. 93, 203503 (2008).
Publications Prior to CWRU
10) X. P. A. Gao, J. Y. Sohn, S. A. Crooker, “Low temperature terahertz spectroscopy of n-InSb through a magnetic field driven metal-insulator transition“, Appl. Phys. Lett. 89, 122108 (2006).
9) X. P. A. Gao, G. S. Boebinger, A. P. Mills, Jr., A. P. Ramirez, L. N. Pfeiffer and K. W. West, “Spin polarization induced tenfold magneto-resistivity of highly metallic 2D holes in a narrow GaAs quantum well“, Phys. Rev. B 73, 241315 (R) (2006) (Rapid communication).
8) M. Biasini, R. D. Gann, J. A. Yarmoff, A. P. Mills, L. N. Pfeiffer, K. W. West, X. P. A. Gao and B. C. D. Williams, “Contactless gating, surface charging and illumination effects in a buried Al0.24Ga0.76As/GaAs quantum well structure”, Euro. Phys. Jour. B 47, 305 (2005).
7) M. Biasini, R. D. Gann, J. A. Yarmoff, A. P. Mills, L. N. Pfeiffer, K. W. West, X. P. A. Gao and B. C. D. Williams, “Charging efficiency and lifetime of image-bound electrons on a dielectric surface”, Appl. Phys. Lett. 86, 162111 (2005).
6) X. P. A. Gao, G. S. Boebinger, A. P. Mills, Jr., A. P. Ramirez, L. N. Pfeiffer, and K. W. West, “Strongly Enhanced Hole-Phonon Coupling in the Metallic State of the Dilute Two-Dimensional Hole Gas“, Phys. Rev. Lett. 94, 086402 (2005).
5) X. P. A. Gao, G. S. Boebinger, A. P. Mills, Jr., A. P. Ramirez, L. N. Pfeiffer, and K. W. West, “Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime“, Phys. Rev. Lett. 93, 256402 (2004).
4) X. P. A. Gao, A. P. Mills, Jr., A. P. Ramirez, L. N. Pfeiffer, and K. W. West, “Weak-localization-like temperature-dependent conductivity of a dilute two-dimensional hole gas in a parallel magnetic field“, Phys. Rev. Lett. 89, 016801 (2002).
3) X. P. A. Gao, A. P. Ramirez, L. N. Pfeiffer, and K. W. West, “Two-dimensional metal in a parallel magnetic field“, Phys. Rev. Lett. 88, 166803 (2002).
2) I. S. Hagemann, Q. Huang, X. P. A. Gao, A. P. Ramirez, and R. J. Cava, “Geometric Magnetic Frustration in Ba2Sn2Ga3ZnCr7O22:A Two-Dimensional Spinel Based Kagome Lattice“, Phys. Rev. Lett. 86, 894 (2001).
1) P. Khalifah, K. D. Nelson, R. Jin, Z. Q. Mao, Y. Liu, Q. Huang, X. P. A. Gao, A. P. Ramirez, R. J. Cava, “Non-Femi-liquid behavior in La2Ru6O19“, Nature, 411, 669 (2001).